elektronische bauelemente SSG4953 -5a, -30v,rds(on) 53m p-channel enhancement mode power mos.fet absolute maximum ratings drain-source voltage gate-source voltage continuous drain current continuous drain current pulsed drain current [ description the ssg4 953 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. features * low on-resistance * simple drive requirement total power dissipation linear derating factor operating junction and storage temperature range thermal data parameter symbo l ratings unit thermal resistance junction-ambient (max) a v v a a i d @t a =7 0 /w c w / c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a -3 0 20 -20 -5 -4 2 0.016 -55~+150 62.5 3 3 3 1 o o o c o c o c o http://www.secosgmbh.com/ any changing of specification will not be informed individual parameter symbol ratings unit 0.25 dimensions in millimeters 6.20 5.80 1.27typ. 0.35 0.49 4.80 5.00 0 0.100.25 1.35 1.75 0.40 0.90 0.19 0.25 3.80 4.00 0.375 ref o 8 o 45 o sop-8 * fast switching characteristic industrial surface mount application and suited for low the sop-8 is universally preferred for all commercial voltage applications such as dc/dc converters. 23 -jun-2010 rev. d page 1 of 4 s1 g1 s2 g2 d1 d1 d2 d2 4953ss date code 1 5 7 8 2 3 4 6 d1 g1 s1 g 2 d 2 s 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free www.datasheet.net/ datasheet pdf - http://www..co.kr/
electrical characteristics( tj=25 c unless otherwise specified) total gate charge r ds(on) h t t p : / / w w w .s e c o sg m b h .c o m/ a n y c ha n g i n g o f s pe c if i c a t i o n w ill no t b e i n f o r m ed i nd i v i dual parameter symbo l max. typ. test condition min. unit drain-source breakdown voltage breakdown voltage temp. coefficient gate threshold voltage gate-source leakage current drain-source leakage current (tj=25 ) static drain-source on-resistance drain-source leakage current (tj=70 ) gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance bv dss bv ds / tj v gs(th) i gss i dss crss qg qgs qgd td (on) td (off) tr ciss coss t f -30 -0.1 -1.0 - 2.5 100 -1 -25 53 90 11.7 2.1 2.9 v v / v na ua ua m nc ns pf [ v gs =0v v ds =-15v f=1.0mhz v dd =-1 5v i d =-1a v gs =-10v r g =6 r d =15 [ [ i d = - 5 a v d s = -15 v v g s = -10v v g s = - 1 0 v , i d = - 5 a v g s = - 4 . 5 v , i d = - 4 a v g s = 0 v , i d = - 2 5 0 u a v g s = 2 0 v v d s = - 3 0 v , v g s = 0 v d s = - 2 4 v , v g s = 0 v d s = v g s , i d = - 2 5 0 u a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ forward transconductance gfs s 5 v ds =-5v, i d =-5a _ _ _ o c o c o c o 2 2 2 9 10 37 23 582 125 86 _ _ _ _ _ _ _ _ _ reference to 25 ,i d =- 1ma 23 -jun-2010 rev. d page 2 of 4 source-drain diode parameter symbo l max. typ. test condition min. unit forward on voltage v ds _ _ i s =1.7a , v gs =0v. v -1.2 notes: 1.pulse width limited by safe operating area. 2.pulse width 300us, dutycycle 2%. ?? ?? reverse recovery time reverse recovery charge is=-5a, v gs =0v _ _ _ _ trr qrr nc ns 24 19 dl/dt=100a/us 3.surface mounted on 1 in copper pad of fr4 board; 135 o c/w when mounted on min. copper pad. 2 2 2 elektronische bauelemente SSG4953 -5a, -30v,rds(on) 53m p-channel enhancement mode power mos.fet [ c o www.datasheet.net/ datasheet pdf - http://www..co.kr/
elektronische bauelemente SSG4953 -5a, -30v,rds(on) 53m p-channel enhancement mode power mos.fet [ characteristics curve fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature fig 5. forward characteristics of reverse diode 23 jun10d 3 4 http://www.secosgmbh.com/ any changing of specification will not be informed individual www.datasheet.net/ datasheet pdf - http://www..co.kr/
elektronische bauelemente SSG4953 -5a, -30v,rds(on) 53m p-channel enhancement mode power mos.fet [ fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 23 -jun-2010 rev. d page 4 of 4 http://www.secosgmbh.com/ any changing of specification will not be informed individual www.datasheet.net/ datasheet pdf - http://www..co.kr/
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